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臨近空間大氣中子誘發(fā)電子器件單粒子翻轉(zhuǎn) 數(shù)值仿真研究

Numerical simulation of single event upset induced by near space atmospheric neutron in electronic components

  • 摘要: 大氣中子作為臨近空間主要的輻射粒子,,能夠誘發(fā)電子器件發(fā)生單粒子翻轉(zhuǎn)效應(yīng),,嚴(yán)重威脅著臨近空間飛行器安全、可靠地工作,。文章研究了臨近空間大氣中子在不同時間,、經(jīng)度、緯度,、高度下的能譜,,計(jì)算了靜態(tài)存儲器(SRAM)中的IMS1601芯片在不同能量各向同性的中子入射下的翻轉(zhuǎn)截面,在國內(nèi)首次計(jì)算出任意兩個臨近空間位置上飛行器的IMS1601芯片的翻轉(zhuǎn)率,,并且對計(jì)算結(jié)果進(jìn)行了驗(yàn)證,。

     

    Abstract: Atmospheric neutron is one of the major radioactive particles in the near space which seriously threatens the safety of spacecraft at this region. In this paper, the neutron spectra at different periods, longitudes, latitudes, altitudes are studied. For different energies of isotropic incident neutrons, the upset cross section of the static random access memory (SRAM) is calculated. The single event upset (SEU) rate for SRAM during the flight between any two places in the near space is obtained. All calculation results are verified.

     

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