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空間用功率MOSFET器件2N7266總劑量

Total ionization dose test of power MOSFET 2N7266 device for space applications

  • 摘要: 文章針對空間用功率MOSFET器件2N7266進(jìn)行了60Co 源γ射線輻射試驗(yàn)研究。在輻射過程中，采用JT-1型晶體管特性圖示儀和計(jì)算機(jī)控制的攝像機(jī)實(shí)時監(jiān)測器件電參數(shù)隨輻射劑量變化的特征，通過試驗(yàn)研究獲得了被試器件閾值電壓、漏電流和擊穿電壓隨總劑量變化的特征，得出了被試器件抗總劑量輻射的指標(biāo)。研究結(jié)果可為被試器件在航天器型號的使用提供技術(shù)參考依據(jù)。

     

    Abstract: This paper investigates the total radiation dose effects on 4 pieces of military power MOSFET 2N7266 under 60Co γ-radiation. During the γ-radiation, the time history of the DUT’s electrical characteristics along with the total radiation dose(TID) is obtained by using JT-1 transistor plotter and computer controlled vidicon. The DUT’s threshold voltage, breakdown voltage and leakage current characteristics are shown in tables and curves against the total radiation dose, from which the total radiation dose resistant capacity can be found for each individual device. The results may provide a reference for applications of 2N7266 MOSFET device in future engineering designs.

     

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