90 keV電子輻照對(duì)Kapton H薄膜化學(xué)結(jié)構(gòu)的影響

Effects of 90 keV proton irradiation on chemical structure of Kapton H film

摘要: 文章研究了能量為90 keV的電子輻照對(duì)Kapton H薄膜化學(xué)結(jié)構(gòu)的影響,。XPS分析表明，低能電子輻照導(dǎo)致Kapton H薄膜分子結(jié)構(gòu)中C—N和C—O鍵的斷裂,，以及C＝O鍵的斷裂和重組,，并且有部分鍵斷裂后交聯(lián)。隨著輻照劑量及輻照能量的增加,，材料中的C—N,、C＝O鍵含量減少，形成表面碳富集,。輻照使柔性結(jié)構(gòu)C—O鍵被破壞，產(chǎn)生的交聯(lián)及以苯環(huán)為主的三維立體網(wǎng)狀結(jié)構(gòu)使其表面硬度增加,。

Abstract: In this paper, the effects of 90 keV proton irradiation on chemical structure of Kapton H film are investigated. X-ray photoelectron spectroscopy (XPS) analysis results show that the low energy electron irradiation induces the break of C－N and C－O bands in Kapton H film molecular structure, the break of C＝O bands and the recombination, while, some broken bands can cross the linkage again. The number of C－N and C＝O bands decreases with increasing electron irradiation energy in Kapton H film molecular structure. The surface hardness of Kapton H film increases after irradiated by 90 keV protons due to the break of C－O bands as flexible structures, and the generation of cross linkage structures and three-dimensional reticulated structures with benzene ring as the main component.