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硅集成電路老煉時(shí)間確定和壽命預(yù)計(jì)

The determination of the burn-in time and the forecast of the lifetime of silicon IC

  • 摘要: 文章基于阿列紐斯經(jīng)驗(yàn)公式,，利用相關(guān)標(biāo)準(zhǔn)中的數(shù)據(jù),，擬合得到硅集成電路老煉試驗(yàn)溫度和時(shí)間的關(guān)系，根據(jù)這種關(guān)系可以確定在標(biāo)準(zhǔn)未規(guī)定的高溫下硅集成電路的老煉時(shí)間,，同時(shí)預(yù)計(jì)了硅集成電路的工作壽命,。最后基于經(jīng)典的溫度應(yīng)力加速試驗(yàn)?zāi)Ｐ瓦M(jìn)行了分析，并與前者進(jìn)行了對比,。

     

    Abstract: Based on the Arrhenius equation, using the data from the standards which are widely used, an analysis is made to obtain the relations between temperature and time for silicon semiconductor integrated circuits. These relations can be used to forecast the lifetime of the operated silicon semiconductor integrate circuit. The above-mentioned relations are compared with conventional relations.

     

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