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SRAM FPGA電離輻射效應(yīng)試驗(yàn)研究

Tests on total dose effects and single event effects on SRAM FPGA

  • 摘要: 針對(duì)SRAM FPGA空間應(yīng)用日益增多,以100萬(wàn)門(mén)SRAM FPGA為樣品,進(jìn)行了單粒子效應(yīng)和電離總劑量效應(yīng)輻照試驗(yàn)。單粒子試驗(yàn)結(jié)果是:試驗(yàn)用粒子最小LET為1.66 MeV·cm2/mg,出現(xiàn)SEU(單粒子翻轉(zhuǎn));LET為4.17 MeV·cm2/mg,出現(xiàn)SEFI(單粒子功能中斷),通過(guò)重新配置,樣品功能恢復(fù)正常;LET在1.66~64.8 MeV?cm2/mg范圍內(nèi),未出現(xiàn)SEL(單粒子鎖定);試驗(yàn)發(fā)現(xiàn),隨SEU數(shù)量的累積,樣品功耗電流會(huì)隨之增加,對(duì)樣品進(jìn)行重新配置,電流恢復(fù)正常。電離總劑量輻照試驗(yàn)結(jié)果是:輻照總劑量75 krad(Si)時(shí),2只樣品功能正常,功耗電流未見(jiàn)明顯變化。輻照到87 krad(Si)時(shí),樣品出現(xiàn)功能失效。試驗(yàn)表明SRAM FPGA屬于SEU敏感的器件,且存在SEFI。SEU和SEFI會(huì)破壞器件功能,導(dǎo)致系統(tǒng)故障。空間應(yīng)用SRAM FPGA必須進(jìn)行抗單粒子加固設(shè)計(jì),推薦的加固方法是三模冗余(TMR)配合定時(shí)重新配置(Scrubbing)。關(guān)鍵部位如控制系統(tǒng)慎用SRAM FPGA。

     

    Abstract: Due to wide applications of SRAM FPGAs in space missions, the total dose effects and single event effects on their functions are studied in this paper by testing their samples. The results of single events effect test show that at the minimum LET of 1.66 MeV·cm2/mg, the single event upset (SEUs) occurs; at an LET value of 4.17 MeV·cm2/mg, SEFIs occur and the function recovers after reconfiguration of FPGAs. No SEL occurs at LET values between 1.66 and 64.8 MeV·cm2/mg. The power supply current increases as the number of SEUs increases and the power supply current recovers after reconfiguration of FPGAs. The results of total dose test indicate that the two test devices are both functional and exhibit no anomalous change in the power supply current until the dose of 75 krad(Si) is reached. One device fails in its function at a total dose of 87 krad(Si). The tests show that SRAM FPGAs are sensitive to SEU and SEFI. SEUs and SEFIs may cause system failures. The most common mitigation techniques for SRAM FPGA to be reinforced during a space use would be TMR combined with scrubbing.

     

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