MOSFET單粒子燒毀引起的DC/DC電源變換器功能失效試驗研究
Test study of function failure of DC/DC converter caused by single event burnout of power MOSFETs
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摘要: 文章利用回旋加速器產生的Kr離子，對雙路輸出的DC/DC電源變換器開展了單粒子效應試驗研究，分析了在空載和加載兩種偏置條件下的試驗結果，指出內部功率MOSFETs器件的漏-源端電壓在單粒子輻照條件下超出了器件的擊穿電壓是導致DC/DC電源變換器單粒子功能失效的直接原因，最后給出了航天器電源系統(tǒng)抗輻射設計和功率MOSFETs器件選用建議。Abstract: Single event effects on DC/DC converter are investigated under loaded and off-loaded bias based on Kr ion irradiation from accelerator. Results under two bias are analyzed. The voltage between drain and source of MOSFETs exceeds its own breakdown voltage during irradiation, which leads to the DC/DC converter function failure. The radiation hardness design of the power system based on DC/DC and inner MOSFETs choice is suggested.
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