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單粒子鎖定極端敏感器件的試驗及對我國航天安全的警示

The radiation test of SRAM devices for extreme single event latch-up susceptibility and a warning to our aerospace safety

  • 摘要: 隨著半導體特征工藝尺寸減小、集成度提高，靜態(tài)存儲器（SRAM）對單粒子鎖定呈現(xiàn)出極其敏感的現(xiàn)象和趨勢，為此國際航天界開展了大量的試驗評估工作，剔除和杜絕了一些極端敏感器件在空間的應用。結合國內外空間應用背景，文章利用脈沖激光實驗裝置和重離子加速器，分別對三星公司新舊兩種型號的4 M位SRAM芯片進行了單粒子鎖定試驗評估。試驗測得兩型號芯片的單粒子鎖定閾值差異巨大，新型號芯片的鎖定閾值低于1.5 MeV·cm2/mg，而老型號芯片的鎖定閾值高于39.6 MeV.cm2/mg。這種對單粒子鎖定極端敏感的芯片若應用于空間，將會發(fā)生0.008～0.04次/天的頻繁鎖定事件，極大地威脅航天器的安全和可靠。為應對這種單粒子鎖定極端敏感的現(xiàn)象和趨勢，提出了加強我國航天產品設計、元器件采購、篩選、試驗等的規(guī)范、技術和條件的建議。

     

    Abstract: Advances in the manufacture of SRAMs over the years have resulted in enormous gains in speed, array size, cell density, and reduction in power consumption. ESA and NASA’s experts have studied the SEE response of these SRAMs, and discovered the extreme sensitivity to SEL in current generations of SRAM devices. Recently, we have tested on Samsung 4M SRAM using a pulsed laser system and a heavy ion accelerator. Heavy ion test shows that the latch-up LET threshold of Samsung 4M SRAM KM684002 is above 39.6 MeV·cm2/mg, but the new Rev. D Samsung 4M SRAM K6R4016C1D has a latch-up LET threshold of below 1.5 MeV?cm2/mg. If K6R4016C1D was used in spacecraft, 0.008～0.04/day SEL would happened, which is a great threat to our aerospace safety. So it should be warned in using these extreme SEL susceptibility devices.

     

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