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3DG111F等四種雙極晶體管空間總劑量效應(yīng)研究

The space total dose effects on bipolar junction transistors 3DG111F, 3DG162J, 3DG180C, and 3DK9H

  • 摘要: 3DG111F等4種雙極晶體管在航天器驅(qū)動(dòng)電子設(shè)備中有著重要的應(yīng)用。研究和掌握空間輻射環(huán)境對(duì)這些器件產(chǎn)生的總劑量效應(yīng)有助于了解單機(jī)總劑量效應(yīng)。文章對(duì)3DG111F等4種雙極晶體管進(jìn)行了總劑量輻照試驗(yàn)、測(cè)量及試驗(yàn)結(jié)果分析。研究結(jié)果可為單機(jī)總劑量效應(yīng)的分析提供試驗(yàn)依據(jù)。

     

    Abstract: Four types of bipolar junction transistors, namely 3DG111F, 3DG162J, 3DG180C, and 3DK9H, play an important role in spacecraft drive electronics. The total dose Ⅱ ABSTRACTS OF THE PRESENT ISSUE effect on these devices in the space radiation environment is discussed in this paper. The ionizing dose experiment on these bipolar junction transistors was carried out in order to provide a basis for the analysis of component total dose effect.

     

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