SRAM單粒子效應(yīng)檢測方法研究

The detection methods for SRAM single event effects

摘要: 采用中國科學(xué)院近代物理研究所的回旋加速器HIRFL產(chǎn)生不同LET值的重離子，以模擬空間輻射環(huán)境，檢測了兩種國產(chǎn)SRAM器件抗單粒子翻轉(zhuǎn)和單粒子鎖定的能力。試驗中采用了兩套單粒子效應(yīng)檢測系統(tǒng)，結(jié)合試驗檢測過程和最終結(jié)果，討論了兩套檢測系統(tǒng)各自的優(yōu)缺點，總結(jié)了試驗中需要注意的其他問題。本研究為今后構(gòu)建其他器件的單粒子效應(yīng)檢測系統(tǒng)提供了參考。

Abstract: SRAM single-event effects are studied in this paper by using heavy ion research facility in Lanzhou (HIRFL) at the Institute of Modern Physics, Chinese Academy of Sciences. Two kinds of SRAMs made in China were tested. The structure and the principle of two detection systems are described in detail. By analyzing the test results, the advantages and drawbacks of these two systems are compared. Related problems are discussed. The designs of SRAM single event effect detection systems can provide a guide for other electronic components’ single event effect detection systems.

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